Silicon-containing deposited film

ABSTRACT

A deposition film is formed on a substrate in a deposition space (A) by the chemical reaction between a gaseous precursor of a higher silicon halide or a higher halosilane formed in a decomposition space (B) and a separately-introduced gaseous, activated species of hydrogen, silane or a halosilane formed in a decomposition space (C).

This application is a continuation of application Ser. No. 08/280,561, filed Jul. 25, 1994, now abandoned; which is a continuation of application Ser. No. 08/101,285, filed Aug. 3, 1993, now abandoned; which in turn, is a continuation of application Ser. No. 07/913,755, filed Jul. 17, 1992, now abandoned; which in turn, is a continuation of application Ser. No. 714,988, filed Jun. 14, 1991, now abandoned; which in turn is a continuation of application Ser. No. 305,546, filed Feb. 3, 1989, now abandoned; which in turn, is a division of application Ser. No. 161,386, filed Feb. 22, 1988, now issued as U.S. Pat. No. 4,835,005; which in turn, is a continuation of application Ser. No. 889,906, filed Jul. 28, 1986, now abandoned; which in turn is a continuation of application Ser. No. 641,021, filed Aug. 15, 1984, now abandoned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a process for forming functional films, particularly deposition films useful for various purposes, especially for semiconductor devices and electrophotographic photosensitive devices.

2. Description of the Prior Art

A number of possible processes have been disclosed up to now for forming deposition films. For instance, for producing films of amorphous silicon deposit, there have been tried the vacuum deposition process, plasma CVD process, CVD process, reactive sputtering process, ion plating process and photo-CVD process, etc. Generally, the plasma CVD process is industrialized and widely used for this purpose.

However, deposition films of amorphous silicon still admit of improvements in overall characteristic including electric and optical properties, various characteristics to fatigue due to repeated uses or to environmental use conditions, and additionally productivity including product uniformity, reproducibility, and mass-productivity.

The conventional plasma CVD process, as compared with the conventional CVD process, is complicated in the reaction process to deposit amorphous silicon and involves many unknown things in the reaction mechanism. The film formation in the plasma CVD process is affected by a number of parameters (e.g. substrate temperature, flow rates and mixing ratio of feed gases, pressure during film formation, high-frequency power used, electrode structure, structure of deposition chamber, rate of evacuation, and plasma generation method). These various parameters, combined with one another, cause sometimes an unstable plasma, which exerts marked adverse effects on the deposited film. In addition, the parameters characteristic of the deposition apparatus must be determined according to the given apparatus, so that it is difficult in practice to generalize the production conditions.

The conventional plasma CVD process is regarded at the present time as the best method for the purpose of obtaining amorphous silicon films which have such electrical and optical properties as to fulfill various application purposes.

However, it is necessary in certain applications of the deposition film to realize reproducible mass production thereof while satisfying needs for the film of a large area, uniform thickness, and uniform quality. In consequence, much investment is required for the mass production equipment, the administration items for the mass production become complicated, tolerances in quality control become narrow, and the regulation and adjustment of equipment becomes delicate. These matters in the production of amorphous silicon deposit films by the plasma CVD process are pointed out as the problems to be solved in the future.

On the other hand, the conventional CVD process requires a high operational temperature and has not given the deposition film having such characteristics that the film can be used practically.

Thus there is an intensive need for a process for producing amorphous silicon films which, as stated above, realizes mass production thereof at a low equipment cost while securing practically acceptable characteristics and uniformity of the films.

The above-stated matters also apply to other functional films, e.g. silicon nitride, silicon carbide, and silicon oxide films.

SUMMARY OF THE INVENTION

An object of the invention is to provide a novel process for forming deposition films which is free of the above-noted drawbacks of the plasma CVD process.

Another object of the invention is to provide a process by which deposition films of good characteristics can be formed at an improved deposition rate without utilizing plasma reaction in the deposition space (A) for the film formation and additionally the simplification of controlling the film formation conditions and mass production of the films can be achieved with ease.

According to an aspect of the invention, there is provided a process for forming a deposition film on a substrate which comprises introducing separately a precursor formed in a decomposition space (B) and activated species formed in another decomposition space (C), into the deposition space (A) wherein the film is formed on the substrate.

According to another aspect of the invention, there is provided a process for forming a deposition film on a substrate which comprises introducing separately activated species formed in a decomposition space (B) and activated species formed in another decomposition space (C), into the deposition space (A) wherein the film is formed on the substrate.

According to a further aspect of the invention, there is provided a process for forming a deposition film on a substrate which comprises introducing separately activated species (a) which are prepared by decomposing a silicon halide represented by the formula Si_(n) X_(2n+2) (n=1, 2, . . . ) and a mixture of activated species of hydrogen with activated species (b) represented by the formula Si_(m) H_(2m-x) (m=1, 2 . . . , x=1, 2, . . . ) the mixture being prepared by decomposing a higher, straight chain silane compound, into the deposition space (A) wherein the film is formed on the substrate.

According to still another aspect of the invention, there is provided a process for forming a deposition film on a substrate which comprises introducing separately activated species (a) which are prepared by decomposing a silicon halide represented by the formula Si_(n) X_(2n+2) (n=1, 2, . . . ) and a mixture of activated species of hydrogen with activated species (b), the mixture being prepared by decomposing a cyclic silane compound, into the deposition space (A) wherein the film is formed on the substrate. As employed herein, n, m, and x are each integers of at least 1.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram illustrating the layer structure of an embodiment of the photoconductive member prepared according to the process of the invention. FIG. 2 is a schematic illustration showing an example of the device to carry out the process of the invention. FIG. 3 is a schematic diagram of an arrangement which will permit industrial mass production of deposition films according to the process of the invention. FIG. 4 is a schematic diagram of another example of the device to carry out the process of the invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

In the process of the invention, the parameters affecting the formation of deposition films are amounts of a precursor and activated species introduced into the deposition space (A), temperatures of the substrate and the space (A), and pressure therein, since no plasma is formed therein. Accordingly, the formation of deposition films is easy to control, and reproducible films can be mass-produced.

The term "precursor" herein means an intermediate that is formed prior to the ultimate product (a material constituting the deposition film) and will be converted completely or partly into a material constituting the ultimate product, though having, in the intact energy state, no or little ability to form the deposition film.

The term "activated species" herein means chemical species, for example, radicals or ions which lie in high energy states and will act chemically one upon another to form a deposition film on a substrate or will undergo chemical interaction or reaction with molecules of the precursor to give energy thereto, for instance, and thereby will bring the precursor to such states as to form a deposition film. Accordingly, the activated species in the former case needs to contain a constituent which will be converted into a constituent of the deposition film, while the activated species in the latter case may or may not contain such a constituent.

In the invention, the precursor or activated species to be introduced from the decomposition space (B) into the deposition space (A) are selected as desired from those of lifetimes, in the case of the precursor, of at least desirably 0.01 sec., preferably 0.1 sec. partiucularly preferably 1 sec., and in the case of the activated species, of at least desirably 1 sec., preferably 10 sec., particularly preferably 150 sec. Constituents of the precursor or of the activated species are converted into main constituents of the deposition film to be formed in the deposition space (A).

When a precursor is introduced from the decomposition space (B), the activated species to be introduced from the decomposition space (C) is selected from those of lifetimes of up to desirably 10 sec., preferably 8 sec., particularly preferably 5 sec. This activated species undergoes chemical interaction in the deposition space (A) with the precursor introduced at the same time from the decomposition space (B) to the deposition space (A), which precursor contains a constituent that will become main constituent of the intended deposition film. Thus, a desired deposition film is readily formed on a given substrate.

When an activated species is introduced from the decomposition space (B), the activated species to be introduced from the decomposition space (C) is of short lifetimes. The activated species undergoes chemical interaction in the deposition space (A) with the activated species introduced at the same time from the decomposition space (B) to the deposition space (A), which contains a constituent that will become main constituent of the resulting deposition film. Thus an intended deposition film is readily formed on a given substrate.

According to the process of the invention, the deposition film formed without generation of any plasma in the deposition space (A) suffers from no substantial adverse effect of the etching action or some other action, e.g. abnormal discharge action. In addition, more stable production of deposition films becomes possible according to the process of the invention, which is an improved CVD process, by controlling the atmospheric temperature of the deposition space (A) and the temperature of the substrate, as desired.

A difference of the process of the invention from the conventional CVD process is to use a precursor and activated species which have been produced in advance in spaces other than the deposition space (A). In this way, the process of the invention has been markedly improved in the film deposition rate over the conventional CVD process. Additionally, the substrate temperature during film deposition can be further lowered. Thus, deposition films of definite quality can be produced industrially in a large volume and at a low cost.

The formation of activated species in the decomposition space (C) can be accomplished by exciting the charged material with not only any of suitable energies including electric discharge energy, light energy, thermal energy, and combined energies of these but also a heterogeneous or homogeneous catalyst.

The material to be fed into the decomposition space (B) is a compound containing at least one silicon atom which combines with a highly electron attractive atom or atomic group, or polar group. Such compounds may include, for example, Si_(n) X_(2n+2) (n=1, 2, 3, . . . , X=F, Cl, Br, I), (SiX₂)_(n) (n≧3, X=F, Cl, Br, I), Si_(n) HX_(2n+1) (n=1, 2, 3, . . . , X=F, Cl, Br, I), and Si_(n) H₂ X_(2n) (n=1, 2, 3, . . . , X=F, Cl, Br, I). Individual examples of these compounds are SiF₄, Si₂ F₆, Si₃ F₈, Si₂ Cl₆, Si₂ Cl₃ F₃, (SiF₂)₅, (SiF₂)₆, (SiF₂)₄, SiHF₃, SiH₂ F₂, SiCl₄, (SiCl₂)₅, SiBr₄, and (SiBr₂)₅, which are gaseous at ordinary temperature or readily gasifiable compounds. SiH₂ (C₆ H₅)₂, SiH₂ (CN)₂ and the like are also used depending upon application purposes of the deposition film. A precursor or activated species are formed by applying energy for decomposition such as thermal energy, light energy, or electric discharge energy to the above-cited compound in the decomposition space (B). The precursor or activated species are introduced into the deposition space (A). The precursor to be introduced desirably need to have a lifetime of at least 0.01 sec. By introducing such a precursor into the deposition space (A), the activating reaction thereof with the activated species introduced from the decomposition space (C) is made more effective and the deposition efficiency and deposition rate are increased, where thermal, light or other energy is applied if necessary onto the substrate or to the atmosphere in the deposition space (A) without using such electric discharge energy as to form plasma. Thus the formation of a desired deposition film is accomplished.

The activated species introduced from the decomposition chamber (B) need to have lifetimes of at least 1 sec., preferably 10 sec., particularly preferably 150 sec. With these active species, the formation of a desired deposition film is accomplished similarly to the case with the precursor stated above.

Feed materials for preparing activated species in the decomposition space (C) may include, for example; H₂, SiH₄, SiH₃ F, SiH₃ Cl, SiH₃ Br, SiH₃ I and the like; higher silane compound such as Si₂ H₆, Si₃ H₈, Si₄ H₁₀ and the like; branched chain silane compound such as SiH₃.SiH(SiH₃)SiH₂.SiH₃ and the like; cyclic silane compound such as (SiH₂)₅, (SiH₂)₄, (SiH₂)₆, (SiH₂)₅.SiH.SiH₃ and the like; and rare gas such as He, Ar, and the like. These materials may be used singly or in combination.

The amount ratio of feeding to the deposition space (A) of the precursor or activated species from the decomposition space (B) to the activated species from the decomposition space (C) is chosen appropriately depending upon the deposition conditions and the kinds of activated species. The ratio is generally 10:1-1:10, preferably 8:2-4:6 (flowrate ratio).

For producing the precursor or activated species in the decomposition space (B) or (C), electric discharge energy, thermal energy, light energy, or some other energy is used as excitation energy in consideration of operating conditions and equipment in individual cases.

When a higher straight chain silane or a cyclic silane is used as the material to be fed into the decomposition space (C), it can be decomposed at a much higher rate and with lower energy and the rate of film deposition can be increased further to a great extent. Accordingly, a steady and high-volume production of deposition films can be accomplished more easily.

Now the invention is illustrated referring to a typical example of electrophotographic image forming members which are produced by the deposition film forming process of the invention.

FIG. 1 shows the structure of such a typical example. The photoconductive member 100 shown in FIG. 1 can be used as an electrophotographic image forming member having a layer structure consisting of a substrate 101 suitable for photoconductive member, an intermediate layer 102 and a surface layer 104 which may be formed as required, and a photoconductive layer 103.

The substrate 101 may be either an electric conductor or an electric insulator. Suitable materials for the conductive substrate are, for example, metals such as NiCr, stainless steel, Al, Cr, Mo, Au, Ir, Nb, Ta, V, Ti, Pt, and Pd and alloys of these metals.

For the insulating substrate there may be employed usually a film or sheet of a synthetic resin, for example, polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, poly(vinyl chloride), poly(vinylidene chloride), polystyrene, and polyamide, glass, ceramics, paper and the like. It is desirable that at least one side of the insulating substrate be given conductivity by some suitable treatment and then overlaid with other necessary layers. For instance, the surface of the substrate is covered with a thin film of NiCr, Al, Cr, Mo, Au, Ir, Nb, Ta, V, Ti, Pt, Pd, In₂ O₃, SnO₂, or ITO (In₂ O₃ +SnO₂) when the substrate is made of glass; and the surface is treated with a metal, for example, NiCr, Al, Ag, Pb, Zn, Ni, Au, Cr, Mo, Ir, Nb, Ta, V, Ti, or Pt by vacuum deposition, electron-beam vapor deposition, sputtering or the like or laminated with a foil of the above metal when the substrate is a synthetic resin film such as a polyester film. The shape of the substrate is free to select as desired from cylindrical form, belt form, plate form, etc. For example, the substrate to be used for an electrophotographic image forming member for high-speed continuous copying is desired to be in endless belt form or hollow cylindrical form.

The intermediate layer 102 comprises, for example, a non-photoconductive amorphous material containing silicon atom and any of carbon, nitrogen, oxygen, and halogen atoms. This layer has the function of preventing effectively the inflow of charge carriers into the photoconductive layer 103 from the substrate 101 side and facilitating the passage from the photoconductive layer 103 side to the substrate 101 side, of photocarriers which are produced in the photoconductive layer 103 by irradiating it with electromagnetic waves.

When the intermediate layer 102 is formed, a continuous operation is possible up to the formation of the photoconductive layer 103. In this case, starting gases for forming the intermediate layer 102, each mixed if necessary with a diluent gas such as He or Ar, are fed into prescribed decomposition spaces (B) and (C), respectively. Then, necessary excitation energies are applied to the gases in the spaces, respectively, to produce a precursor or activated species in the space (B) and activated species in the space (C). These are introduced into a deposition space (A) wherein the substrate 101 is set in advance, and the intended intermediate layer 102 is formed on the substrate 101, if necessary, by applying further energy for film formation to the introduced gases.

Effective materials as the feed to the decomposition space (C) for producing activated species to form the intermediate layer 102 are as follows: Ar, He, H₂, SiH₄ ; hydrogen-rich halogenated silanes, e.g. SiH₃ Cl, SiH₃ F, and SiH₃ Br; higher straight chain silanes, e.g. Si₂ H₆, Si₃ H₈, and Si₄ H ; cyclic silanes, e.g. (SiH₂)₅ and (SiH₂)₄ ; and mixtures of cyclic silane, hydrogen and higher straight chain silane; gaseous or gasifiable nitrogen compounds such as nitrogen, nitride and azide, e.g. N₂, NH₃, H₂ N.NH₂, HN₃, and NH₄ N₃ ; C₁ -C₅ saturated hydrocarbons, e.g. methane, ethane, propane, n-butane, and pentane; C₂ -C₅ ethylenic hydrocarbons, e.g. ethylene, propylene, butene-1, butene-2, isobutylene, and pentene; C₂ -C₄ acetylenic hydrocarbons, e.g. acetylene, methylacetylene, and butyne; and oxygen compounds, e.g. O₂, O₃, CO, CO₂, NO, NO₂, and N₂ O.

The starting material for forming the intermediate layer 102 is selected appropriately from the above-cited compounds so that prescribed atoms will be contained as constituents in the resulting intermediate layer 102.

On the other hand, effective materials as the feed to the decomposition space (B) for producing a precursor or activated species to form the intermediate layer 102 are, for example, SiF₄ and SiH₂ F₂, which at elevated temperature readily produce a precursor such as SiF₂ having a long lifetime or activated species.

The thickness of the intermediate layer 102 is desirably 30-1000 Å, preferably 50-600 Å.

The photoconductive layer 103 comprises an amorphous silicon, a-SiX(H), which comprises silicon atoms as the matrix and contains halogen atoms (X) and, if necessary, hydrogen atoms (H) so as to possess such photoconductive characteristics that the resulting member can exhibit sufficient functions as an electrophotographic image forming member.

For the formation of the photoconductive layer 103, a starting gas such as SiF₄ or Si₂ H₂ F₂ is fed, similarly to the case of the intermediate layer 102, into the decomposition space (B) and decomposed at an elevated temperature to produce a precursor or activated species. This precursor or these activated species are introduced into the deposition space (A). Into the decomposition space (C), on the other hand, a starting gas such as H₂, SiH₄, SiH₃ F, Si₂ H₆, Si₃ H₈, (SiH₂)₅, (SiH₂)₄, (SiH₂)₆, or mixture of these compounds is fed and excited with a prescribed energy to produce activated species. These activated species are introduced into the deposition space (A) and undergo chemical interaction with the precursor or activated species introduced thereinto from the decomposition space (B), to deposit the intended photoconductive layer 103 on the intermediate layer 102.

Generally the thickness of the photoconductive layer 103 is chosen appropriately according to the application purpose of the end product. The thickness of the photoconductive layer 103 shown in FIG. 1 is chosen appropriately in relation to the thickness of the intermediate layer 102 so as to enable the two layers to exhibit respective functions effectively. In general, the thickness of the photoconductive layer 103 is desired to be hundreds-thousands times or more as large as that of the intermediate layer 102. Absolute values of the suitable thickness of the photoconductive layer 103 are preferably 1-100μ, more preferably 2-50μ.

The content of each of H and X (X is halogen atom such as F) in the photoconductive layer 103 is desirably 1-40 atomic %, preferably 5-30 atomic %.

The surface layer 104 shown in FIG. 1 may be formed, if necessary, similarly to the intermediate layer 102 or the photoconductive layer 103. For making the surface layer 104 of silicon carbide, a starting gas, e.g. SiF₄, is fed into the decomposition space (B) and a starting gas, e.g. a SiH₄ /CH₄ /H₂ mixture, SiH₄ /SiH₂ (CH₃)₂ mixture, Si₂ H₆ /CH₄ /H₂ mixture, Si₂ H₆ /SiH₂ (CH₃)₂ mixture, (SiH₂)₅ /CH₄ /H₂ mixture, or (SiH₂)₅ /SiH₂ (CH₃)₂ mixture, is fed into the decomposition space (C). The gas introduced into each space is decomposed with excitation energy into a precursor or activated species in the respective spaces and separately introduced into the deposition space (A) to deposit the intended surface layer 104 on the photoconductive layer 103.

A preferred example of the surface layer 104 is a deposition film, such as a silicon nitride film or silicon oxide film, having a wide band gap. It is also possible to change the film composition continuously from the photoconductive layer 103 to the surface layer 104. The thickness of the surface layer 104 is in the range of desirably 0.01 to 5μ, preferably 0.05 to 1μ.

For making the photoconductive layer 103 of n-type or p-type as required, during the layer formation, it is doped with an n-type impurity, or p-type impurity, or both impurities while controlling the doping content.

Suitable p-type impurites for the doping are elements of group III-A of the periodic table, e.g. B, Al, Ga, In, and Tl. Suitable n-type impurities are elements of group V-A of the periodic table, e.g. N, P, As, Sb, and Bi, among which B, Ga, P, and Sb are best suited.

Suitable contents of the doping in the photoconductive layer 103 are determined according to the electric and optical characteristics required for the layer. In the case of elements of group III-A of the periodic table, the suitable contents thereof are 3×10⁻² atomic % and less, and in the case of elements of group V-A, the suitable contents thereof are 5×10 atomic % and less.

The doping of the photoconductive layer 103 with an impurity can be accomplished by feeding a starting material for introducing the doping impurity in the gaseous state into the decomposition space (B) or (C) at the time of the formation of the layer. Preferably, the material is fed not into the space (B) but into the space (C), from which activated species are introduced into the deposition space (A).

Suitable starting materials for the doping impurity are compounds which are gaseous at ordinary temperature and pressure or at least readily gasifiable under the conditions of forming the layer. Examples of such starting materials are PH₃, P₂ H₄, PF₃, PF₅, PCl₃, AsH₃, AsF₃, AsF₅, AsCl₃, SbH₃, SbF₅, BiH₃, BF₃, BCl₃, BBr₃, B₂ H₆, B₄ H₁₀, B₅ H₉, B₅ H₁₁, B₆ H₁₀, B₆ H₁₂, and AlCl₃.

EXAMPLE 1

Using an apparatus as shown in FIG. 2, a drum type of electrophotographic image forming member was prepared in the following manner.

In FIG. 2, numerals denote the following: 1: a deposition space (A), 2: a decomposition space (B), 3: a decomposition space (C), 4: an electric furnace, 5: solid Si grains, 6: an inlet pipe for feeding a starting material for a precursor, 7: a conduit for the precursor; 8: an electric furnace, 9: an inlet pipe for a starting material for activated species, 10: a conduit for the activated species, 11: a motor, 12: a heater, 13: a precursor blowoff pipe, 14: an activated species blowoff pipe, 15: an Al cylinder, and 16: an exhaust valve.

An Al cylinder 15 was suspended in the deposition space (A)1. The heater 12 was set inside the cylinder so that it may be rotated by the motor 11.

The apparatus comprises the conduit 7 for introducing the precursor from the decomposition space (B)2, the blowoff pipe 13 for the precursor, the conduit 10 for introducing the activated species from the decomposition space (C)3 and the blowoff pipe 14 for the activated species.

The solid Si grains 5 filled in the decomposition space (B)2 were melted by heating with the electric furnace 4. While keeping the temperature of the Si melt at 1100° C., SiF₄ was blown thereinto from a bomb through the inlet pipe 6 to form a precursor SiF₂. The SiF₂ -containing gas was then introduced into the deposition space (A)1 through the conduit 7 and the blowoff pipe 13.

On the other hand, SiH₄ and H₂ were fed into the decomposition space (C)3 through the inlet pipe 9, and heated at 600° C. with the electric furnace 8 to form activated species such as SiH₂, SiH, SiH₃, and H. The activated species-containing gas was introduced into the deposition space (A)1 through the conduit 10 and the blowoff pipe 14. Herein the length of the conduit 10 had been designed as short as possible to minimize the deactivation of the activated species during the passage therethrough. The Al cylinder in the deposition space (A) is heated at 300° C. by the heater 12 and rotated. The waste gas was discharged through the exhaust valve 16. Thus a 20-μ thick photoconductive layer 103 was formed. Similarly, an intermediate layer 102 and surface layer 104 were formed.

EXAMPLE 2

An amorphous silicon deposition film was formed by the conventional plasma CVD process using an apparatus as shown in FIG. 2, the deposition space (A) of which was provided with a 13.56-MHz high-frequency electric discharge unit. At that time, SiF₄, SiH₄ and H₂ were employed.

EXAMPLE 3

An electrophotographic image forming member in the drum form was prepared in the same manner as in Example 1 except that, for the formation of the photoconductive layer, H₂ was fed, instead of the SiH₄ /H₂ mixture, into the decomposition space (C)3 and a plasma reaction was caused to take place by a 13.56-MHz high-frequency electric discharge without heating with the electric furnace so that the hydrogen plasma state was produced. The activated species of H was introduced into the deposition space (A) through the blowoff pipe 14.

The preparation conditions and performance of the electrophotographic image forming memeber in the drum form obtained in Examples 1, 2 and 3 are shown in Table 1.

In Examples 1 and 3, the intermediate layer 102 (2000 Å thick) was formed in such a manner that SiF₄ and SiH₄ /H₂ /NO/B₂ H₆ (NO 2% and B₂ H₆ 0.2% by vol. %) were introduced into the decomposition spaces (B) and (C), respectively, and the precursor and activated species were produced with the respective excitation energies and introduced into the deposition space (A).

Also, in Example 2, the intermediate layer (2000 Å thick) was formed by the plasma CVD process employing a gas mixture of SiH₄ /H₂ /NO/B₂ H₆ of the same composition as that in Examples 1 and 3.

In Examples 1 and 3, the surface layer 104 (1000 Å thick) was formed in such a manner that SiF₄ was introduced into the decomposition space (B) while SiH₄ /CH₄ /H₂ was introduced in volume ratio of 10:100:50 into the decomposition space (C), and the precursor and activated species were produced with the respective excitation thermal energies and introduced into the deposition space (A).

Also in Example 2, the plasma CVD process was carried out employing SiH₄ /CH₄ /H₂ of the same composition as above to form the surface layer 104 (1000 Å thick).

Electrophotographic image forming drums prepared in Examples 1, 2, and 3 were each set in a copying machine of Carlson process type comprising the positive charging, image exposure, development with a negative toner, image transfer, and heat fixing, and A3-size copies of black image, white image and gray image were made. Irregularities on the resulting images were examined and expressed by the average number of image defects. The uniformity of charged potential on the cylinder surface in the circumferential and axial directions was also evaluated. Results thereof are shown in Table 1.

EXAMPLE 4

Using an apparatus as shown in FIG. 3, electrophotographic image forming members in drum form were prepared under similar conditions as in Example 1.

In FIG. 3, numerals 7, 10, 13, 14, 15, and 16 have the same meaning as in FIG. 2, and 17 denotes a movable stand provided with rotating means, 18 a cooling space, 19 a heating space, and 20 a deposition space.

As shown in FIG. 3, the apparatus employed in this example comprises a heating chamber 19, deposition chamber 20, and cooling chamber 18. Al cylinders 15 were placed on the movable stand 17 provided with rotating means. In the apparatus, a number of Al cylinders could be treated at once in one deposition space to produce electrophotographic image forming members in the drum form continuously.

It has been confirmed that electrophotographic image forming members in the drum form having uniform and reproducible deposition films can be mass-produced at a low cost by controlling the temperatures of the deposition space and of the Al cylinders and the flow amounts of the precursor-containing gas blown out from the pipe 13 through the conduit 7 from the decomposition space (B) and of the activated species-containing gas blown out from the pipe 14 through the conduit 10 from the decomposition space (C).

According to the plasma CVD process, such treatment of a number of cylindrical substrates in one deposition space would involve problems in the uniformity of the electric discharge and in synergistic effects of complicated production condition parameters, so that it has been impossible to produce electrophotographic image forming member in the drum form having uniform deposition films with high reproducibility.

EXAMPLE 5

Using an apparatus as shown in FIG. 4, an electrophotographic image forming drum was prepared.

In FIG. 4, numerals denote the following: 20: a deposition chamber, 21: a high-frequency power source (13.56 MHz), 22: a plasma space, 23: a 50-mesh stainless steel gauze, 24: a substrate, 25: a support table, 26: a ground for keeping the same potential, 27: a blowoff pipe for a precursor-containing gas or activated species-containing gas from a decomposition space (B), 28: a blowoff pipe for an SiH₄ /H₂ mixture, 29: a deposition space (A), 30: an exhaust valve.

Thus, using the apparatus, which had the decomposition space (C) and the deposition space (A) in the same chamber and separately the decomposition space (B), SiF₂ was produced in the decomposition space (B) in the same manner as in Example 1 and the SiF₂ -containing gas was introduced into the deposition space (A) while an SiH₄ /H₂ mixture was introduced into the decomposition space (C), where a plasma was generated and reacted with SiF₂. The resulting gas was passed through the gauze 23 and amorphous silicon was deposited therefrom on the substrate which was kept at a temperature of 280° C. in the deposition space (A). The deposited photoconductive layer exhibited good characteristics, e.g. a dark conductivity, V_(D), of 2×10¹¹ Ω⁻¹ cm⁻¹ and a light conductivity, V_(P), of 3×10⁶ Ω⁻¹ cm⁻¹.

EXAMPLE 6

An electrophotographic image forming member in the drum form was prepared by using an apparatus as shown in FIG. 2.

The photoconductive layer 103 thereof was formed as follows: An Al cylinder 15, suspended in the deposition space (A)1, was rotated and heated at 300° C. by the heater 12 which was set inside the Al cylinder and rotated by the motor 11.

The solid Si grains 5 filled in the decomposition space (B)2 were melted by heating with the electric furnace 4. While keeping the temperature of the Si melt at 1100° C., SiF₄ was blown thereinto from a bomb through the inlet pipe 6 to form an activated species of SiF₂. The SiF₂ -containing gas was then introduced into the deposition space (A)1 through the conduit 7 and the blowoff pipe 13.

On the other hand, an Si₂ H₆ /H₂ (vol. ratio 5:5) mixture was fed into the decomposition space (C)3 through the inlet pipe 9, and heated at 450° C. with the electric furnace 8 to form activated species such as SiH₂, SiH, SiH₃, and H. The activated species-containing gas was then introduced into the deposition sapce (A)1 through the conduit 10 and the blowoff pipe 14. Herein the conduit 10 has been designed as short as possible to minimize the deactivation of the activated species during the passage therethrough. Thus, the photoconductive layer 103 (21μ thick) was formed. The waste gas was discharged through the exhaust valve 16.

Similarly, the intermediate layer 102 and surface layer 104 were formed.

EXAMPLE 7

A photoconductive layer 103 was formed from SiF₄, Si₂ H₆ and H₂ by the conventional plasma CVD process using an apparatus as shown in FIG. 2, the deposition space (A)1 of which was provided with a 13.56-MHz high-frequency electric discharge unit.

EXAMPLE 8

A deposition film was formed in the same manner as in Example 6, except that an SiH₄ /Si₃ H₈ /H₂ (vol. ratio 2:1:1) mixture was fed as starting gas into the decomposition space (C)3, and a plasma reaction was caused to take place by applying a 13.56-MHz high-frequency electric field to the mixture instead of heating with the electric furnace so that a hydrogen plasma state was produced. The activated species of H and various silanes were introduced to the blowoff pipe 14. In such a manner, an electrophotographic image forming member in the drum form was prepared.

EXAMPLE 9

An electrophotographic image forming member in the drum form was prepared in the same manner as in Example 6, except that, for the formation of the photoconductive layer, Si₂ F₆ was fed as the starting gas into the decomposition space (B) and an Si₂ H₆ /H₂ (vol. ratio 5:5) mixture was fed into the decomposition space (C) and heated at 450° C. with the electric furnace to produce activated species of hydrogen and of silane.

The preparation conditions and performance of the electrophotographic image forming member in the drum form obtained in Examples 6, 7, 8 and 9 are shown in Table 2.

In Examples 6, 8 and 9, the intermediate layer 102 (2000 Å thick) was formed in such a manner that SiF₄ and Si₂ H₆ /H₂ /NO/B₂ H₆ (NO 2% and B₂ H₆ 0.2% by vol. %) were introduced into the decomposition spaces (B) and (C), respectively, and activated species were produced with the respective excitation energies and introduced into the deposition space (A).

Also, in Example 7, the intermediate layer (2000 Å thick) was formed by the plasma CVD process employing a gas mixture of Si₂ H₆ /H₂ /NO/B₂ H₆ of the same composition as that in Examples 6, 8 and 9.

In Examples 6, 8 and 9, the surface layer 104 (1000 Å thick) was formed in such a manner that SiF₄ was introduced into the decomposition space (B) while Si₂ H₆ /CH₄ /H₂ was introduced in volume ratio of 10:100:50 into the decomposition space (C), and activated species were produced with the respective excitation thermal energies and introduced into the deposition space (A).

Also in Example 7, the plasma CVD process was carried out employing Si₂ H₆ /CH₄ /H₂ of the same composition as above to form the surface layer 104 (1000 Å thick).

EXAMPLE 10

Using an apparatus as shown in FIG. 3, electrophotographic image forming members in the drum form were preprared continuously under similar conditions as in Example 6.

It has been confirmed that electrophotographic image forming members in the drum form having uniform and reproducible deposition films can be mass-produced at low costs by controlling the temperatures of the deposition space and of the Al cylinders and the flow amounts of the activated species-containing gas from the decomposition space (B) and of the activated species-containing gas from the decomposition space (C) into the deposition space (A).

According to the plasma CVD process, such treatment of a number of cylindrical substrates in one deposition space would involve problems in the uniformity of the electric discharge and in synergistic effects of complicated production condition parameters, so that it has been impossible to produce electrophotographic image forming member in the drum form having uniform deposition films with high reproducibility.

EXAMPLE 11

An electrophotographic image forming member in the drum form was prepared in the same manner as in Example 6 except that, for the formation of the photoconductive layer, a mixture of SiH₄ and H₂ (vol. ratio 1:1) was used as the starting gas introduced into the decomposition space (C)3 and heated at 600° C. by the electric furnace to produce the activated species of silane and hydrogen. The surface layer 104 and intermediate layer 102 were formed similarly.

Electrophotographic image forming members in the drum form prepared in Examples 6, 7, 8, 9, and 11 were evaluated in the same manner as in the case of Examples 1, 2, and 3. Results thereof are shown in Table 2 together with operational conditions in the formation of the photoconductive layers.

EXAMPLE 12

An electrophotographic image forming member in the drum form was prepared by using an apparatus as shown in FIG. 2.

The photoconductive layer thereof was formed as follows: An Al cylinder 15, suspended in the deposition space (A)1, was rotated and heated at 280° C. by the heater 12 which was set inside the Al cylinder and rotated by the motor 11.

The solid Si grains 5 filled in the decomposition space (B)2 were melted by heating with the electric furnace 4. While keeping the temperature of the Si melt at 1100° C., SiF₄ was blown thereinto from a bomb through the inlet pipe 6 to form an activated species of SiF₂. The SiF₂ -containing gas was then introduced into the deposition space (A)1 through the conduit 7 and the blowoff pipe 13.

On the other hand, (SiH₂)₅ was fed into the decomposition space (C)3 through the inlet pipe 9, and heated at 300° C. with the electric furnace 8 to produce activated species such as SiH₂, SiH, SiH₃, and H. The activated species-containing gas was then introduced into the deposition space (A)1 through the conduit 10 and the blowoff pipe 14. Herein the conduit had been designed as short as possible to minimize the deactivation of the activated species during the passage therethrough. Thus, the photoconductive layer 103 (20μ thick) was formed. The waste gas was discharged through the exhaust valve 16. Similarly, the intermediate layer 102 and surface layer 104 were formed.

EXAMPLE 13

A photoconductive layer 103 was formed from SiF₄, Si₂ H₆ and H₂ by the conventional plasma CVD process using an apparatus as shown in FIG. 2, the deposition space (A)1 of which was provided with a 13.56-MHz high-frequency electric discharge unit.

EXAMPLE 14

An electrophotographic image forming member in the drum form was prepared in the same manner as in Example 12, except that, for the formation of the photoconductive layer 103, an SiH₄ /(SiH₂)₅ (vol ratio 1:1) mixture was fed as starting gas into the decomposition space (C)3, and a plasma reaction was caused to take place by applying a 13.56-MHz high-frequency electric field to the mixture instead of heating with the electric furnace so that a plasma state was produced. The activated species of various silanes and H were then introduced into the blowoff pipe 14. In this manner, a desired image forming member was obtained.

EXAMPLE 15

An electrophotographic image forming member in the drum form was prepared in the same manner as in Example 12, except that, for the formation of the photoconductive layer, an (SiH₂)₄ /(SiH₂)₅ /H₂ (vol. ratio 1:1:1) mixture was fed as starting gas into the decomposition space (C) and heated at 320° C. with the electric furnace to produce activated species of hydrogen and of silanes.

EXAMPLE 16

An electrophotographic image forming member in the drum form was prepared in the same manner as in Example 12, except that, for the formation of the photoconductive layer, Si₂ F₆ as starting gas was fed into the decomposition space (B) and (SiH₂)₅ was fed as starting gas into the decomposition space (C) and heated at 300° C. with the electric furnace to produce activated species of silanes and of hydrogen.

EXAMPLE 17

An electrophotographic image forming member in the drum form was prepared in the same manner as in Example 12, except that, for the formation of the photoconductive layer, an Si₂ H₆ /(SiH₂)₅ (vol. ratio 1:1) mixture was fed as starting gas into the decomposition space (C) and heated at 310° C. with the electric furnace to produce activated species of silanes and of hydrogen.

The preparation conditions and performance of the electrophotographic image forming member in the drum form obtained in Examples 12, 13, 14, 15, 16 and 17 are shown in Table 3.

In Examples 12, 14, 15, 16 and 17, the intermediate layer 102 (2000 Å thick) was formed in such a manner that SiF₄ and (SiH₂)₅ /H₂ /NO/B₂ H₆ (NO 2% and B₂ H₆ 0.2% by vol. %) were introduced into the decomposition spaces (B) and (C), respectively, and activated species were produced with the respective excitation energies and introduced into the deposition space (A).

Also, in Example 13, the intermediate layer (2000 Å thick) was formed by the plama CVD process employing a gas mixture of (SiH₂)₅ /H₂ /NO/B₂ H₆ of the same composition as that in Examples 12 and 14.

In Examples 12, 14, 15, 16 and 17, the surface layer 104 (1000 Å thick) was formed in such a manner that SiF₄ was introduced into the decomposition space (B) while (SiH₂)₅ /CH₄ /H₂ was introduced in volume ratio of 10:100:50 into the decomposition space (C), and activated species were produced with the respective excitation thermal energies and introduced into the deposition space (A).

Also in Example 13, the plasma CVD process was carried out employing (SiH₂)₅ /CH₄ /H₂ of the same composition as above to form the surface layer 104 (1000 Å thick).

Electrophotographic image forming drums prepared in Examples 12, 13, 14, 15, 16 and 17 were evaluated in the same manner as in the case of Examples 1, 2, and 3. Results thereof are shown in Table 3 together with operational conditions in the formation of the photoconductive layers.

EXAMPLE 18

Using an apparatus as shown in FIG. 3, electrophotographic image forming members in the drum form were prepared continuously under similar conditions as in Example 12.

It has been confirmed that electrophotographic image forming members in the drum form having uniform and reproducible deposition films can be mass-produced at a low cost by controlling the temperatures of the deposition space and of the Al cylinders and the flow amounts of the activated species-containing gas from the decomposition space (B), and of the activated species-containing gas from the decomposition space (C) into the deposition space (A).

According to the plasma CVD process, such treatment of a number of cylindrical substates in one deposition space would involve problems in the uniformity of the electric discharge and in synergistic effects of complicated production condition parameters, so that it has been impossible to produce electrophotographic image forming member in the drum form having uniform deposition films with high reproducibility.

                                      TABLE 1                                      __________________________________________________________________________     Item           Example 1                                                                              Example 2                                                                              Example 3                                       __________________________________________________________________________     Decomp. space (B)                                                              Feed gas       SiF.sub.4       SiF.sub.4                                       Decomp. temp.  1100° C. 1100° C.                                 Main precursor SiF.sub.2 *     SiF.sub.2                                       Decomp. space (C)                                                              Feed gas (vol. ratio)                                                                         SiH.sub.4 /H.sub.2                                                                             H.sub.2                                                        (1:1)                                                           Decomp. energy Heat, 600° C.                                                                           Plasma RF 150 W                                 Activated species                                                                             SiH.sub.2 *, SiH*,                                                                             H*                                                             SiH.sub.3 *, H*, Si*                                            Deposition space (A)                                                           Inflow from (B)                                                                               200 SCCM        200 SCCM                                        Inflow from (C)                                                                               100 SCCM        80 SCCM                                         Inflow from bomb       SiF.sub.4 200 SCCM                                                             SiH.sub.4 100 SCCM                                                             H.sub.2 100 SCCM                                        Pressure in (A)                                                                               1.0 Torr                                                                               1.0 Torr                                                                               0.8 Torr                                        Substrate temp.                                                                               280° C.                                                                         260° C.                                                                         280° C.                                  Temp. in (A)   250° C.  250° C.                                  Rate of deposition                                                                            15 Å/sec                                                                           5 Å/sec                                                                            12 Å/sec                                    Plasma RF              130 W                                                   Thickness of photo-                                                                           20μ  17μ  22μ                                          conductive layer                                                               Average number of image                                                                       2       15      3                                               defects per each of 10 drums                                                   Deviation of charged                                                                          ±10 V                                                                               ±30 V                                                                               ±8 V                                         potentials distributed in                                                      circumferential direction                                                      Deviation of charged                                                                          ±15 V                                                                               ±35 V                                                                               ±15 V                                        potentials distributed in                                                      axial direction                                                                Nature of process                                                                             Process of                                                                             Conventional                                                                           Proces of                                                      this    plasma CVD                                                                             this                                                           invention                                                                              process invention                                       __________________________________________________________________________

                                      TABLE 2                                      __________________________________________________________________________     Item        Example 6                                                                               Example 7                                                                               Example 8                                                                               Example 9                                                                              Example 11                      __________________________________________________________________________     Decomp. space (B)                                                              Feed gas    SiF.sub.4         SiF.sub.4                                                                               Si.sub.2 F.sub.6                                                                       SiF.sub.4                       Decomp. temp.                                                                              1100° C.   1100° C.                                                                         800° C.                                                                         1100° C.                 Main precursor                                                                             SiF.sub.2 *       SiF.sub.2 *                                                                             SiF.sub.2 *                                                                            SiF.sub.2 *                     Decomp. space (C)                                                              Feed gas    Si.sub.2 H.sub.6 /H.sub.2                                                                        SiH.sub.4 /Si.sub.3 H.sub.8 /H.sub.2                                                    Si.sub.2 H.sub.6 /H.sub.2                                                              SiH.sub.4 /H.sub.2              (vol. ratio)                                                                               (5:5)             (10:5:5) (5:5)   (1:1)                           Decomp. energy                                                                             Heat 450° C.                                                                              Plasma RF 100 W                                                                         Heat 450° C.                                                                    Heat 600° C.             Activated species                                                                          SiH.sub.2 *, SiH* Simular to                                                                              Similar to                                                                             Similar to                                  Si*, SiH.sub.3 *  Example 6                                                                               Example 6                                                                              Example 6                                   Si.sub.2 H.sub.5 *, H*                                             Decomp. space (A)                                                              Inflow from (B)                                                                            150 SCCM          140 SCCM 120 SCCM                                                                               200 SCCM                        Inflow from (C)                                                                            80 SCCM           75 SCCM  80 SCCM 100 SCCM                        Inflow from bomb     SiF.sub.4 200 SCCM                                                             Si.sub.2 H.sub.6 100 SCCM                                                      H.sub.2 100 SCCM                                          Pressure in (A)                                                                            1.1 Torr 1.2 Torr 1.2 Torr 1.0 Torr                                                                               1.0 Torr                        Substrate temp.                                                                            270° C.                                                                          260° C.                                                                          270° C.                                                                          270° C.                                                                         280° C.                  Temp. in (A)                                                                               250° C.    250° C.                                                                          250° C.                                                                         250° C.                  Rate of deposition                                                                         20 Å/sec                                                                            8 Å/sec                                                                             21 Å/sec                                                                            21 Å/sec                                                                           15 Å/sec                    Plasma RF            130 W                                                     Thickness of photo-                                                                        21μ   18μ   22μ   21μ  20μ                          conductive layer                                                               Average number of                                                                          2        17       3        2       2                               image defects per                                                              each of 10 drums                                                               Deviation of charged                                                                       ±10 V ±30 V ±8 V  ±11 V                                                                               ±10 V                        potentials distri-                                                             buted in circumfer-                                                            ential direction                                                               Deviation of charged                                                                       ±13 V ±35 V ±15 V ±12 V                                                                               ±15 V                        potentials distri-                                                             buted in axial                                                                 direction                                                                      Nature of process                                                                          Process of                                                                              Conventional                                                                            Process of                                                                              Process of                                                                             Activated                                   this     plasma CVD                                                                              this     this    species of                                  invention                                                                               process  invention                                                                               invention                                                                              monosilane                      __________________________________________________________________________

                                      TABLE 3                                      __________________________________________________________________________     Item      Example 12                                                                            Example 13                                                                             Example 14                                                                              Example 15                                                                               Example 16                                                                              Example                   __________________________________________________________________________                                                          17                        Decomp. space (B)                                                              Feed gas  SiF.sub.4      SiF.sub.4                                                                               SiF.sub.4 Si.sub.2 F.sub.6                                                                        SiF.sub.4                 Decomp. temp.                                                                            1100° C.                                                                               1100° C.                                                                         1100° C.                                                                          1100° C.                                                                         1100° C.           Main precursor                                                                           SiF.sub.2 *    SiF.sub.2 *                                                                             SiF.sub.2 *                                                                              SiF.sub.2 *                                                                             SiF.sub.2 *               Decomp. space (C)                                                              Feed gas  (SiH.sub.2).sub.5                                                                             SiH.sub.4 /(SiH.sub.2).sub.5                                                            (SiH.sub.2).sub.4 /(SiH.sub.2).sub.5                                           /H.sub.2  (SiH.sub.2).sub.5                                                                       Si.sub.2 H.sub.6                                                               /(SiH.sub.2).sub.5        (vol. ratio)             (1:1)    (1:1:1)            (1:1)                     Decomp. energy                                                                           Heat           Plasma RF                                                                               Heat      Heat     Heat                                300° C. 150 W    320° C.                                                                           300° C.                                                                          310° C.            Activated species                                                                        SiH.sub.2 *, H*                                                                               Similar to                                                                              Similar to                                                                               Similar to                                                                              Similar to                          SiH.sub.3 *, SiH*                                                                             Example 12                                                                              Example 12                                                                               Example 12                                                                              Example 12                          Si*                                                                  Decomp. space (A)                                                              Inflow from (B)                                                                          150 SCCM       135 SCCM 180 SCCM  130 SCCM 170 SCCM                  Inflow from (C)                                                                          70 SCCM        60 SCCM  100 SCCM  70 SCCM  100 SCCM                  Inflow bomb      SiF.sub.4                                                                      200 SCCM                                                                       Si.sub.2 H.sub.6                                                               100 SCCM                                                                       H.sub.2                                                                        100 SCCM                                                      Pressure in (A)                                                                          1.1 Torr                                                                              1.0 Torr                                                                               1.0 Torr 1.2 Torr  1.1 Torr 1.2 Torr                  Substrate temp.                                                                          260° C.                                                                        260° C.                                                                         270° C.                                                                          2700C     260° C.                                                                          260° C.            Temp. in (A)                                                                             250° C. 250° C.                                                                          250° C.                                                                           200° C.                                                                          250° C.            Rate of   31 Å/sec                                                                          5 Å/sec                                                                            26 Å/sec                                                                            33 Å/sec                                                                             35 Å/sec                                                                            35 Å/sec              deposition                                                                     Plasma RF        130 W                                                         Thickness of                                                                             20μ 17μ  21μ   20μ    20μ   20μ                    photoconductive                                                                layer                                                                          Average number                                                                           1      15      3        2         1        2                         of image defects                                                               per each of                                                                    10 drums                                                                       Deviation of                                                                   charged potential                                                                        ±10 V                                                                              ±30 V                                                                               ±8 V  ±5 V   ±8 V  ±4 V                   distributed in                                                                 circumferential                                                                direction                                                                      Deviation of                                                                             ±12 V                                                                              ±35 V                                                                               ±14 V ±12 V  ±13 V ±10 V                  charged potential                                                              distributed in                                                                 axial direction                                                                Nature of Process                                                                               Conven- Process  Process   Process  Process                   process   of this                                                                               tional  of this  of this   of this  of this                             invention                                                                             plasma  invention                                                                               invention invention                                                                               invention                                  CVD                                                                            process                                                       __________________________________________________________________________ 

What is claimed is:
 1. A semiconductor device comprising:(a) a substrate; and (b) a deposition film comprising silicon as a matrix and containing 1 to 40 atomic % of hydrogen or halogen formed on the substrate, wherein said deposition film is prepared by forming a gaseous precursor in a decomposition space (B) by decomposing a starting material selected from the group consisting of the compounds of the formulas: Si_(n) X_(2n+2) (SiX₂)_(n) Si_(n) HX_(2n+1) Si_(n) H₂ X_(2n) wherein n is an integer from 1 to 3 and X is selected from the group consisting of F, Cl, Br and I; forming a gaseous activated species in another decomposition space (C) by decomposing another starting material selected from the group consisting of H₂, SiH₄, SiH₃ Br, SiH₃ I and SiH₃ F; and separately introducing said gaseous precursor and said activated species into a deposition space (A) at a flow ratio of said gaseous precursor to said activated species from 10:1 to 1:10, wherein the activated species is capable of undergoing chemical interaction with the precursor to form the film on the substrate, said process being conducted (i) without exposing a film-forming surface of the substrate to a plasma atmosphere; (ii) by maintaining the substrate at a temperature no greater than 280° C.; and (iii) at a deposition rate of 12-35 Å/sec.
 2. The semiconductor device according to claim 1, wherein said substrate has a drum shape.
 3. The semiconductor device according to claim 1, wherein a plurality of deposition films are formed.
 4. The semiconductor device according to claim 1, which is an electrophotographic photosensitive member.
 5. The semiconductor device according to claim 1, wherein the precursor has a lifetime of at least 0.01 second.
 6. The semiconductor device according to claim 1, wherein the activated species have lifetimes of up to 10 seconds.
 7. The semiconductor device according to claim 1, wherein the precursor or the activated species are formed by utilizing any of electric discharge energy, thermal energy and light energy.
 8. The semiconductor device according to claim 1, wherein the precursor or activated species formed include a precursor or activated species of a p-type impurity or n-type impurity.
 9. The semiconductor device according to claim 1, wherein the deposition film is from 1 to 100μm in thickness. 